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The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

Coleman, PG, Nash, D, Edwardson, CJ, Knights, AP and Gwilliam, RM (2011) The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy JOURNAL OF APPLIED PHYSICS, 110 (1). ? - ?. ISSN 0021-8979

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Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Journal of Applied Physics, 110(1) 016104 and may be found at P. G. Coleman et al., J. Appl. Phys. 110, 016104(2011)

Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, IMPLANTED SI, CLUSTERS, ENERGY, BEAMS, AU
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Symplectic Elements
Date Deposited: 01 Dec 2011 11:38
Last Modified: 18 Sep 2014 01:43
URI: http://epubs.surrey.ac.uk/id/eprint/7828

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