The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy
Coleman, PG, Nash, D, Edwardson, CJ, Knights, AP and Gwilliam, RM (2011) The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy JOURNAL OF APPLIED PHYSICS, 110 (1), ARTN 0.
Gwilliam_The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron.pdf - Version of Record
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||1 July 2011|
|Identification Number :||https://doi.org/10.1063/1.3605487|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, IMPLANTED SI, CLUSTERS, ENERGY, BEAMS, AU|
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|Additional Information :||
Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Journal of Applied Physics, 110(1) 016104 and may be found at P. G. Coleman et al., J. Appl. Phys. 110, 016104(2011)
|Depositing User :||Symplectic Elements|
|Date Deposited :||01 Dec 2011 11:38|
|Last Modified :||17 Jan 2015 14:55|
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