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Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes

Milosavljevic, M, Lourenco, MA, Gwilliam, RM and Homewood, KP (2011) Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes JOURNAL OF APPLIED PHYSICS, 110 (3). ? - ?. ISSN 0021-8979

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Item Type: Article
Additional Information:

Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Journal of Applied Physics, 110 (3) 033508 and may be found at M. Milosavljevic et al., J. Appl. Phys. 110, 033508 (2011)

Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DEFECTS, BORON
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Symplectic Elements
Date Deposited: 01 Dec 2011 11:35
Last Modified: 09 Jun 2014 13:31
URI: http://epubs.surrey.ac.uk/id/eprint/7826

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