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Ion beam assisted crystallization of amorphous silicon layers using high current density Gallium beams

England, J, Phaneuf, MW, Laquerre, A, Smith, A and Gwilliam, R (2011) Ion beam assisted crystallization of amorphous silicon layers using high current density Gallium beams Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms.

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Item Type: Article
Authors :
NameEmailORCID
England, JUNSPECIFIEDUNSPECIFIED
Phaneuf, MWUNSPECIFIEDUNSPECIFIED
Laquerre, AUNSPECIFIEDUNSPECIFIED
Smith, AUNSPECIFIEDUNSPECIFIED
Gwilliam, RUNSPECIFIEDUNSPECIFIED
Date : 2011
Identification Number : 10.1016/j.nimb.2011.01.111
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:58
Last Modified : 31 Oct 2017 14:13
URI: http://epubs.surrey.ac.uk/id/eprint/7819

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