University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM and Homewood, KP (2005) Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes JOURNAL OF APPLIED PHYSICS, 97 (7). ? - ?. ISSN 0021-8979

[img]
Preview
PDF
fulltext.pdf

Download (432Kb)

Abstract

We have studied the role of boron ion energy in the engineering of dislocation loops for silicon light-emitting diodes (LEDs). Boron ions from 10 to 80 keV were implanted in (100) Si at ambient temperature, to a constant fluence of 1x10(15) ions/cm(2). After irradiation the samples were annealed for 20 min at 950 degrees C by rapid thermal annealing. The samples were analyzed by transmission electron microscopy and Rutherford backscattering spectroscopy. It was found that the applied ion implantation/thermal processing induces interstitial perfect and faulted dislocation loops in {111} habit planes, with Burgers vectors a/2 < 110 > and a/3 < 111 >, respectively. The loops are located around the projected ion range, but stretch in depth approximately to the end of range. Their size and distribution depend strongly on the applied ion energy. In the 10 keV boron-implanted samples the loops are shallow, with a mean size of similar to 30 nm for faulted loops and similar to 75 nm for perfect loops. Higher energies yield buried, large, and irregularly shaped perfect loops, up to similar to 500 nm, coexisting with much smaller faulted loops. In the latter case much more Si interstitials are bounded by the loops, which are assigned to a higher supersaturation of interstitials in as-implanted samples, due to separated Frenkel pairs. An interesting phenomenon was found: the perfect loops achieved a steady-state maximum size when the ion energy reached 40 keV. Further increase of the ion energy only increased the number of these large loops and made them bury deeper in the substrate. The results of this work contribute to laying a solid ground in controlling the size and distribution of dislocation loops in the fabrication of silicon LEDs.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, ION-IMPLANTED SILICON, SIZE-DISTRIBUTION, EXTENDED DEFECTS, DIFFUSION, BEHAVIOR
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:05
Last Modified: 23 Sep 2013 18:25
URI: http://epubs.surrey.ac.uk/id/eprint/78

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800