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Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM and Homewood, KP (2005) Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes JOURNAL OF APPLIED PHYSICS, 97 (7). ? - ?. ISSN 0021-8979

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmail
Milosavljevic, MUNSPECIFIED
Shao, GUNSPECIFIED
Lourenco, MAUNSPECIFIED
Gwilliam, RMUNSPECIFIED
Homewood, KPUNSPECIFIED
Date : 1 April 2005
Identification Number : 10.1063/1.1866492
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, ION-IMPLANTED SILICON, SIZE-DISTRIBUTION, EXTENDED DEFECTS, DIFFUSION, BEHAVIOR
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:05
Last Modified : 14 Mar 2015 14:33
URI: http://epubs.surrey.ac.uk/id/eprint/78

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