Low cost patterning of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) films to increase organic photovoltaic device efficiency
Emah, JB, Curry, RJ and Silva, SRP (2008) Low cost patterning of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) films to increase organic photovoltaic device efficiency Applied Physics Letters, 93. ISSN 1941-420X
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A low-cost lithographic technique to pattern poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) films with 10 nm deep features of 700 nm periodicity is demonstrated. The use of these patterned films in poly (3-hexylthiophene) : [6,6]-phenylC(61)-butyric acid methyl ester organic photovoltaic devices leads to an increase in short circuit current (J(sc)), fill factor, and power conversion efficiency (PCE) with only a slight reduction in open circuit voltage. Patterning the PEDOT: PSS at 150 degrees C increases Jsc from 2.44 to 3.03 mA/cm(2) improving the PCE from 0.63% to 0.81% with similar increases due to patterning also being obtained at other temperatures.
Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 93 (10) 103301 and may be found at J. B. Emah et al., Appl. Phys.Lett. 93, 103301 (2008)
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Depositing User:||Mr Adam Field|
|Date Deposited:||01 Dec 2011 11:47|
|Last Modified:||23 Sep 2013 18:51|
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