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Exact equipotential profile mapping: A self-validating method

Filip, LD, Carey, JD and Silva, SRP (2011) Exact equipotential profile mapping: A self-validating method JOURNAL OF APPLIED PHYSICS, 109 (8). ? - ?. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.3582141


Item Type:Article
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Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Journal of Applied Physics, 109 (8) 084527 and may be found at L. D. Filip et al.,J. Appl.Phys. 109, 084527 (2011)

Uncontrolled Keywords:Science & Technology, Physical Sciences, Physics, Applied, Physics, FIELD ENHANCEMENT FACTOR, CARBON NANOTUBE, MODEL CALCULATION, ELECTRIC-FIELD, EMISSION AREA, SPACE-CHARGE, SURFACE, ARRAYS, SIMULATION, EMITTERS
Divisions:Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
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ID Code:7792
Deposited By:Symplectic Elements
Deposited On:24 Nov 2011 13:03
Last Modified:17 May 2013 11:59

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