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Exact equipotential profile mapping: A self-validating method

Filip, LD, Carey, JD and Silva, SRP (2011) Exact equipotential profile mapping: A self-validating method JOURNAL OF APPLIED PHYSICS, 109 (8). ? - ?. ISSN 0021-8979

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J. Appl. Phys. 109, 084527 (2011).pdf - Accepted Version
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Item Type: Article
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Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Journal of Applied Physics, 109 (8) 084527 and may be found at L. D. Filip et al.,J. Appl.Phys. 109, 084527 (2011)

Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, FIELD ENHANCEMENT FACTOR, CARBON NANOTUBE, MODEL CALCULATION, ELECTRIC-FIELD, EMISSION AREA, SPACE-CHARGE, SURFACE, ARRAYS, SIMULATION, EMITTERS
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Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User: Symplectic Elements
Date Deposited: 24 Nov 2011 13:03
Last Modified: 28 Nov 2013 14:10
URI: http://epubs.surrey.ac.uk/id/eprint/7792

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