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Silicon as a model ion trap: Time domain measurements of donor Rydberg states

Vinh, NQ, Greenland, PT, Litvinenko, K, Redlich, B, van der Meer, AFG, Lynch, SA, Warner, M, Stoneham, AM, Aeppli, G, Paul, DJ, Pidgeon, CR and Murdin, BN (2008) Silicon as a model ion trap: Time domain measurements of donor Rydberg states PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 105 (31). 10649 - 10653. ISSN 0027-8424

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Official URL: http://dx.doi.org/10.1073/pnas.0802721105


Item Type:Article
Additional Information:Copyright PNAS 2008.
Uncontrolled Keywords:Science & Technology, Multidisciplinary Sciences, Science & Technology - Other Topics, coherence, free electron laser, quantum information, picosecond population dynamics, hydrogenic donor impurity, ELECTRONIC EXCITATION, QUANTUM GATES, RECOMBINATION, ACCEPTORS
Divisions:Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
ID Code:7767
Deposited By:Symplectic Elements
Deposited On:25 Nov 2011 14:30
Last Modified:08 Jun 2013 14:34

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