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Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Hamilton, JJ, Kirkby, KJ, Cowern, NEB, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S and Parisini, A (2007) Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink APPLIED PHYSICS LETTERS, 91 (9), ARTN 0.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmailORCID
Hamilton, JJUNSPECIFIEDUNSPECIFIED
Kirkby, KJUNSPECIFIEDUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Collart, EJHUNSPECIFIEDUNSPECIFIED
Bersani, MUNSPECIFIEDUNSPECIFIED
Giubertoni, DUNSPECIFIEDUNSPECIFIED
Gennaro, SUNSPECIFIEDUNSPECIFIED
Parisini, AUNSPECIFIEDUNSPECIFIED
Date : 27 August 2007
Identification Number : 10.1063/1.2778749
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, IMPLANTS, SOI
Related URLs :
Additional Information : Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 91 (9) and may be found at http://apl.aip.org/resource/1/applab/v91/i9/p092122_s1. J.J Hamilton et al., Appl. Phys.Lett. 91,(2007)
Depositing User : Mr Adam Field
Date Deposited : 19 Jun 2013 09:30
Last Modified : 18 Feb 2015 14:36
URI: http://epubs.surrey.ac.uk/id/eprint/773413

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