Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink
Hamilton, JJ, Kirkby, KJ, Cowern, NEB, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S and Parisini, A (2007) Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink APPLIED PHYSICS LETTERS, 91 (9), ARTN 0.
Available under License : See the attached licence file.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||27 August 2007|
|Identification Number :||https://doi.org/10.1063/1.2778749|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, IMPLANTS, SOI|
|Related URLs :|
|Additional Information :||Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 91 (9) and may be found at http://apl.aip.org/resource/1/applab/v91/i9/p092122_s1. J.J Hamilton et al., Appl. Phys.Lett. 91,(2007)|
|Depositing User :||Mr Adam Field|
|Date Deposited :||19 Jun 2013 09:30|
|Last Modified :||18 Feb 2015 14:36|
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