Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing
Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8), 082109.
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The effects of surface proximity and B concentration on end-of-range defect formation during nonmelt laser annealing in preamorphized silicon have been studied. These effects were analyzed by observing the activation and diffusion of an ultrashallow B implant, using Hall effect and secondary ion mass spectrometry measurements. By adjusting the preamorphizing implant and laser annealing conditions, B deactivation and diffusion were minimized, resulting in a sheet resistance of similar to 600 Omega/sq with a 16 nm junction depth. This is attributed to a combination of enhanced dissolution of end-of-range defects and preferential formation of B-interstitial clusters due to the surface proximity and high B concentration, respectively. (C) 2008 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||25 February 2008|
|Identification Number :||https://doi.org/10.1063/1.2885091|
|Uncontrolled Keywords :||SILICON, IMPLANTS, DEACTIVATION, ACTIVATION, DIFFUSION, JUNCTIONS|
|Additional Information :||Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.</p> <p>The following article appeared in Applied Physics Letters, 92 (8 and may be found at http://apl.aip.org/resource/1/applab/v92/i8/p082109_s1 J.A Sharp et al., Appl. Phys.Lett. 92,(2008)|
|Depositing User :||Mr Adam Field|
|Date Deposited :||19 Jun 2013 09:20|
|Last Modified :||09 Jun 2014 13:29|
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