Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface
Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.
Available under License : See the attached licence file.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||24 July 2006|
|Identification Number :||https://doi.org/10.1063/1.2240257|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED|
|Related URLs :|
|Additional Information :||Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (4) and may be found at http://apl.aip.org/resource/1/applab/v89/i4/p042111_s1 J.J. Hamilton et al., Appl. Phys.Lett. 89,(2006)|
|Depositing User :||Mr Adam Field|
|Date Deposited :||19 Jun 2013 09:13|
|Last Modified :||18 Feb 2015 14:36|
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