Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.

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Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :	Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A
Date :	24 July 2006
DOI :	10.1063/1.2240257
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED
Related URLs :	Author
Additional Information :	Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (4) and may be found at http://apl.aip.org/resource/1/applab/v89/i4/p042111_s1 J.J. Hamilton et al., Appl. Phys.Lett. 89,(2006)
Depositing User :	Mr Adam Field
Date Deposited :	19 Jun 2013 09:13
Last Modified :	06 Jul 2019 05:12
URI:	http://epubs.surrey.ac.uk/id/eprint/773411

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