Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs
Litvinenko, KL, Leontiadou, MA, Li, J, Clowes, SK, Emeny, MT, Ashley, T, Pidgeon, CR, Cohen, LF and Murdin, BN (2010) Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs APPLIED PHYSICS LETTERS, 96 (11). ? - ?. ISSN 0003-6951
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Electron spin relaxation times have been measured in InSb and InAs epi-layers in a moderate (<4T) external magnetic field. A strong and opposite field dependence of the spin lifetime was observed for longitudinal (Faraday) and transverse (Voigt) configuration. In the Faraday configuration the spin lifetime increases because the D’Yakonov-Perel dephasing process is suppressed. At the high field limit the Elliot-Yafet spin flip relaxation process dominates, enabling its direct determination. Conversely, as predicted theoretically for narrow band gap semiconductors, an additional efficient spin dephasing mechanism dominates in the Voigt configuration significantly decreasing the electron spin lifetime with increasing field.
Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 96 (11) 111107 and may be found at K. L. Litvinenko et al., Appl. Phys.Lett. 96, 111107 (2010)
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, electron spin polarisation, Faraday effect, III-V semiconductors, indium compounds, semiconductor epitaxial layers, spin dynamics, EFFECT TRANSISTOR, QUANTUM-WELLS, RELAXATION, ABSORPTION, ELECTRONS|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Depositing User:||Mr Adam Field|
|Date Deposited:||01 Dec 2011 11:42|
|Last Modified:||23 Sep 2013 18:50|
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