Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
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Wittmann, B, Danilov, SN, Bel'kov, VV, Tarasenko, SA, Novik, EG, Buhmann, H, Brüne, C, Molenkamp, LW, Kvon, ZD, Mikhailov, NN, Dvoretsky, SA, Vinh, NQ, Meer, AFGVD, Murdin, B and Ganichev, SD (2010) Circular photogalvanic effect in HgTe/CdHgTe quantum well structures arXiv . (Unpublished)
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Official URL: http://arxiv.org/abs/1002.2528v1
Abstract
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed.
| Item Type: | Article |
|---|---|
| Additional Information: | Unpublished manusrcipt. Posted in arXiv |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| Related URLs: | |
| ID Code: | 7720 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 24 Nov 2011 12:45 |
| Last Modified: | 25 Apr 2013 12:43 |
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