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Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

Wittmann, B, Danilov, SN, Bel'kov, VV, Tarasenko, SA, Novik, EG, Buhmann, H, Brüne, C, Molenkamp, LW, Kvon, ZD, Mikhailov, NN , Dvoretsky, SA, Vinh, NQ, Meer, AFGVD, Murdin, B and Ganichev, SD (2010) Circular photogalvanic effect in HgTe/CdHgTe quantum well structures arXiv. (Unpublished)

1002.2528v1.pdf - Author's Original
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We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Authors :
Wittmann, B
Danilov, SN
Bel'kov, VV
Tarasenko, SA
Novik, EG
Buhmann, H
Brüne, C
Molenkamp, LW
Kvon, ZD
Mikhailov, NN
Dvoretsky, SA
Vinh, NQ
Murdin, B
Ganichev, SD
Date : 12 February 2010
Related URLs :
Additional Information : Unpublished manusrcipt. Posted in arXiv
Depositing User : Symplectic Elements
Date Deposited : 24 Nov 2011 12:45
Last Modified : 31 Oct 2017 14:13

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