The effect of fast neutron irradiation on the performance of synthetic single crystal diamond particle detectors
Tools
Tools
Tools
Lohstroh, A, Sellin, PJ, Gkoumas, S, Al-Barakaty, H, Veeramani, P, Ozsan, ME, Prekas, G, Veale, MC, Parkin, JM and Davies, AW (2010) The effect of fast neutron irradiation on the performance of synthetic single crystal diamond particle detectors DIAMOND AND RELATED MATERIALS, 19 (7-9). 841 - 845. ISSN 0925-9635
![[img]](/style/images/fileicons/application_pdf.png)
| PDF - Accepted Version Available under License : See the attached licence file. 141Kb | |
![[img]](/style/images/fileicons/text_plain.png) | Plain Text (licence) 1516b |
Official URL: http://dx.doi.org/10.1016/j.diamond.2010.02.006
Abstract
Diamond is known for its extreme hardness which may allow it to operate as a particle detector in high fluence environments even after absorption of large radiation doses. We present a study of the deterioration of the charge collection efficiency (CCE) due to neutrons produced by U-235 fission, with irradiation fluences up to 1 x 10(16) n cm(-2). The planar devices were fabricated by thermal evaporation of Au onto approx. 300 mu m thick high purity chemical vapour deposited diamond produced by Element Six Ltd., UK. The detector performance was investigated as a function of bias voltage at room temperature using Am-241 alpha-particles and minimum ionising particles (MIPs) of a Sr-90 source. At low fluences up to 2 x 10(13) n cm(-2), the detectors reach the initial saturated signal amplitude after irradiation. However, the signal is less stable and deteriorates due to polarisation. This effect can be reduced by initial priming with X-rays. No peak could be distinguished in the detector response in the unprimed state after 10(16) n cm(-2) with bias voltages up to 1000 V (equivalent to 32 kV cm(-1)). However, a peak at about 18% CCE could be recovered after priming. (C) 2010 Elsevier B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Additional Information: | NOTICE: this is the author’s version of a work that was accepted for publication in Diamond and Related Materials. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Diamond and Related Materials, 19(7-9), July 2010, DOI 10.1016/j.diamond.2010.02.006. |
| Uncontrolled Keywords: | Diamond crystal, Electrical property characterisation Defects, Detectors, Radiation damage, CVD-DIAMOND, ION-IMPLANTATION, DOSIMETRY, RADIOTHERAPY, MOBILITY, SENSORS, PHYSICS |
| Divisions: | Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 7672 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 01 Dec 2011 14:24 |
| Last Modified: | 08 Jun 2013 15:10 |
Document Downloads
Repository Staff Only: item control page