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A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Everett, JP, Kearney, MJ, Rueda, H, Johnson, EM, Aaen, PH, Wood, J and Snowden, CM (2011) A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors IEEE T ELECTRON DEV, 58 (9). pp. 3081-3088.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Theory and Computation
Authors :
AuthorsEmailORCID
Everett, JPUNSPECIFIEDUNSPECIFIED
Kearney, MJUNSPECIFIEDUNSPECIFIED
Rueda, HUNSPECIFIEDUNSPECIFIED
Johnson, EMUNSPECIFIEDUNSPECIFIED
Aaen, PHUNSPECIFIEDUNSPECIFIED
Wood, JUNSPECIFIEDUNSPECIFIED
Snowden, CMUNSPECIFIEDUNSPECIFIED
Date : 1 September 2011
Identification Number : 10.1109/TED.2011.2160546
Uncontrolled Keywords : Field-effect transistor (FET), laterally diffused metal-oxide-semiconductor (LDMOS), quasi-2-D (Q2-D), transistor model, INCLUDING QUASI-SATURATION, CHARGE-SHEET MODEL, MOSFET MODEL, VOLTAGE, CIRCUIT, DEVICE, CAD
Additional Information : © 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Depositing User : Symplectic Elements
Date Deposited : 15 Mar 2013 12:17
Last Modified : 09 Jun 2014 13:37
URI: http://epubs.surrey.ac.uk/id/eprint/763134

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