Multiphysics Modeling of RF and Microwave High-Power Transistors
Aaen, PH, Wood, J, Bridges, D, Zhang, L, Johnson, E, Pla, JA, Barbieri, T, Snowden, CM, Everett, JP and Kearney, MJ (2012) Multiphysics Modeling of RF and Microwave High-Power Transistors IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 60 (12). pp. 4013-4023.
Available under License : See the attached licence file.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Theory and Computation|
|Date :||1 December 2012|
|Identification Number :||https://doi.org/10.1109/TMTT.2012.2224366|
|Uncontrolled Keywords :||Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC, Electrothermal, global modeling, laterally diffused metal-oxide-semiconductor (LDMOS) transistor, power field-effect transistor (FET), DESIGN, FETS|
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|Additional Information :||© 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||15 Mar 2013 12:11|
|Last Modified :||17 Jan 2015 14:55|
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