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Multiphysics Modeling of RF and Microwave High-Power Transistors

Aaen, PH, Wood, J, Bridges, D, Zhang, L, Johnson, E, Pla, JA, Barbieri, T, Snowden, CM, Everett, JP and Kearney, MJ (2012) Multiphysics Modeling of RF and Microwave High-Power Transistors IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 60 (12). pp. 4013-4023.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Theory and Computation
Authors :
Aaen, PH
Wood, J
Bridges, D
Zhang, L
Johnson, E
Pla, JA
Barbieri, T
Snowden, CM
Everett, JP
Kearney, MJ
Date : 1 December 2012
DOI : 10.1109/TMTT.2012.2224366
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC, Electrothermal, global modeling, laterally diffused metal-oxide-semiconductor (LDMOS) transistor, power field-effect transistor (FET), DESIGN, FETS
Related URLs :
Additional Information : © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Depositing User : Symplectic Elements
Date Deposited : 15 Mar 2013 12:11
Last Modified : 31 Oct 2017 15:02

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