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Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation

Tsang, WM, Stolojan, V, Sealy, BJ, Wong, SP and Silva, SRP (2007) Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation In: Joint 50th International Field Emission Symposium/19th International Vacuum Nanoelectronics Conference, 2006-07-17 - 2006-07-20, Guilin, PEOPLES R CHINA.

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Abstract

In this work, Co ions were implanted into thermally oxidised SiO2 layers on silicon substrates. The implantation energy was 50 keV and the doses were 1, 3, 5 and 7 x 10(16) Co+/cm2. The field emission (FE) properties of these layers were studied and correlated with results from atomic force microscopy and transmission electron microscopy measurements. Other than that for the lowest dose sample, crystallised Co nanoclusters, with sizes ranging from 1.8 to 5.7 nm, are observed in these Co-implanted layers. The higher dose samples exhibit excellent FE properties and give an emission current of 1 nA at electric fields as low as 5 V/microm, for a dose of 5 x 10(16) Co+/cm2, compared with 120 V/microm for the lowest dose samples. We attribute the excellent FE properties of these layers to the formation of Co nanoclusters, with the electrical inhomogeneity giving rise to local field enhancement. Finally, repeatable staircase-like current-field (I-F) characteristics are observed in FE measurements of these higher dose samples as compared to conventional Fowler-Nordheim-type I-F characteristics in the lower dose sample. We believe this data may be a result of Coulomb blockade effects arising from the isolated low-capacitance metal quantum dots formed by controlled ion implantation.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
AuthorsEmailORCID
Tsang, WMUNSPECIFIEDUNSPECIFIED
Stolojan, VUNSPECIFIEDUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Wong, SPUNSPECIFIEDUNSPECIFIED
Silva, SRPUNSPECIFIEDUNSPECIFIED
Date : 1 September 2007
Identification Number : 10.1016/j.ultramic.2007.02.013
Contributors :
ContributionNameEmailORCID
PublisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Microscopy, field emission, ion implantation, quantum dot, cobalt, NANOTUBES, SILVER, LAYERS, FILMS
Additional Information : NOTICE: this is the author’s version of a work that was accepted for publication in ULTRAMICROSCOPY. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in ULTRAMICROSCOPY, 107, September 2007, DOI http://dx.doi.org/10.1016/j.ultramic.2007.02.013.
Depositing User : Symplectic Elements
Date Deposited : 04 Feb 2013 12:23
Last Modified : 23 Sep 2013 19:59
URI: http://epubs.surrey.ac.uk/id/eprint/745836

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