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Carbon nanotube field effect transistor measurements in vacuum

Yahya, I, Stolojan, V, Clowes, S, Mustaza, SM and Silva, SRP (2010) Carbon nanotube field effect transistor measurements in vacuum In: ICSE 2010, 2010-06-28 - 2010-06-30, Melaka, Malaysia.

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Abstract

Three terminal measurements on a carbon nanotube field effect transistor (CNTFET) were carried out in high vacuum and the ambient, and its performance compared. The on-off current ratio, ION/IOFF, were 102 and 105 for devices operated in high vacuum and in ambient air, respectively. Here, we show that the conversion of p-type to ambipolar behavior may largely be attributed to the O2 in ambient doping the single walled carbon nanotubes (SWCNTs) in the active channel which consists of bundles of SWCNTs. Switching behaviour of these devices, with respect to constituent types of SWCNTs in the bundles will be discussed.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
AuthorsEmailORCID
Yahya, IUNSPECIFIEDUNSPECIFIED
Stolojan, VUNSPECIFIEDUNSPECIFIED
Clowes, SUNSPECIFIEDUNSPECIFIED
Mustaza, SMUNSPECIFIEDUNSPECIFIED
Silva, SRPUNSPECIFIEDUNSPECIFIED
Date : 2010
Identification Number : https://doi.org/10.1109/SMELEC.2010.5549562
Contributors :
ContributionNameEmailORCID
PublisherIEEE, UNSPECIFIEDUNSPECIFIED
Depositing User : Symplectic Elements
Date Deposited : 04 Feb 2013 10:07
Last Modified : 28 Mar 2017 13:43
URI: http://epubs.surrey.ac.uk/id/eprint/745832

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