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Electron field-emission properties of Ag-SiO2 nanocomposite layers

Tsang, WM, Stolojan, V, Giusca, C, Poa, CHP, Sealy, B, Silva, SRP and Wong, SP (2006) Electron field-emission properties of Ag-SiO2 nanocomposite layers In: 18th International Vacuum Nanoelectronics Conference, 2005-07-10 - 2005-07-14, Oxford, ENGLAND.

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Abstract

In this work, Ag-Si O2 nanocomposite layers were synthesized by introducing Ag nanoclusters into thermally oxidized Si O2 layers, using ion implantation. The field-emission (FE) properties of these layers were studied and correlated with the results from atomic force microscopy and transmission electron microscopy measurements. These nanocomposites exhibit good FE properties and give an emission current of 1 nA at electric fields as low as 13 Vμm, for a dose of 5× 1016 Ag+ cm2, compared with 204 Vμm for "bare" Si O2 layers. It is clearly demonstrated that the good FE properties of these nanocomposites are attributed to two types of local-field enhancement: one due to the surface morphology and the other due to electrical inhomogeneity. The isolated conductive Ag nanoclusters embedded in the electrically insulating Si O2 matrix provide a field enhancement due to the electrical inhomogeneity effect. Moreover, the implanted Ag ions diffuse to the surface, during the implantation process, and create dense surface-protrusion structure which provides a geometric local-field enhancement. The local-field-enhancement mechanisms in these samples are critically dependent on the implantation dose of Ag. © 2006 American Vacuum Society.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
AuthorsEmailORCID
Tsang, WMUNSPECIFIEDUNSPECIFIED
Stolojan, VUNSPECIFIEDUNSPECIFIED
Giusca, CUNSPECIFIEDUNSPECIFIED
Poa, CHPUNSPECIFIEDUNSPECIFIED
Sealy, BUNSPECIFIEDUNSPECIFIED
Silva, SRPUNSPECIFIEDUNSPECIFIED
Wong, SPUNSPECIFIEDUNSPECIFIED
Date : 1 March 2006
Identification Number : 10.1116/1.2165669
Contributors :
ContributionNameEmailORCID
PublisherA V S AMER INST PHYSICS, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, ION-IMPLANTATION, SILVER, SILICA, FILMS
Additional Information :

Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 24 and may be found at http://dx.doi.org/10.1116/1.2165669

Depositing User : Symplectic Elements
Date Deposited : 04 Feb 2013 11:00
Last Modified : 23 Sep 2013 19:59
URI: http://epubs.surrey.ac.uk/id/eprint/745829

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