Deployment of titanium thermal barrier for low-temperature carbon nanotube growth

Chen, GY, Poa, CHP, Henley, SJ, Stolojan, V, Silva, SRP and Haq, S (2005) Deployment of titanium thermal barrier for low-temperature carbon nanotube growth APPLIED PHYSICS LETTERS, 87 (25), ARTN 2.

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Abstract

Chemical vapor-synthesized carbon nanotubes are typically grown at temperatures around 600 °C. We report on the deployment of a titanium layer to help elevate the constraints on the substrate temperature during plasma-assisted growth. The growth is possible through the lowering of the hydrocarbon content used in the deposition, with the only source of heat provided by the plasma. The nanotubes synthesized have a small diameter distribution, which deviates from the usual trend that the diameter is determined by the thickness of the catalyst film. Simple thermodynamic simulations also show that the quantity of heat, that can be distributed, is determined by the thickness of the titanium layer. Despite the lower synthesis temperature, it is shown that this technique allows for high growth rates as well as better quality nanotubes. © 2005 American Institute of Physics.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :	Name Email ORCID Chen, GY UNSPECIFIED UNSPECIFIED Poa, CHP UNSPECIFIED UNSPECIFIED Henley, SJ UNSPECIFIED UNSPECIFIED Stolojan, V UNSPECIFIED UNSPECIFIED Silva, SRP UNSPECIFIED UNSPECIFIED Haq, S UNSPECIFIED UNSPECIFIED
Date :	19 December 2005
Identification Number :	https://doi.org/10.1063/1.2150587
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, ROOM-TEMPERATURE, ELECTRODES
Related URLs :	Author
Additional Information :	Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 87 (25) 253115 and may be found at http://dx.doi.org/10.1063/1.2150587
Depositing User :	Mr Adam Field
Date Deposited :	28 Jan 2013 11:36
Last Modified :	11 Mar 2015 14:33
URI:	http://epubs.surrey.ac.uk/id/eprint/745823

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