Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications
Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Hosea, TJC, Sweeney, SJ, Hosea, TJC, Petropoulos, JP, Zhong, Y, Dongmo, PB and Zide, JMO (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications Applied Physics Letters, 101 (22).
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Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, E, and spin-orbit splitting, Δ, respectively. The possibility of achieving Δ > E and a reduced temperature (T) dependence for E are significant for suppressing recombination losses and improving performance in mid-infrared photonic devices. We measure E (x, T) and Δ (x, T) in InGa BiAs/InP samples for 0 x 0.039 by various complementary optical spectroscopic techniques. While we find no clear evidence of a decreased dE/dT (≈0.34 ± 0.06 meV/K in all samples) we find Δ > E for x > 3.3-4.3. The predictions of a valence band anti-crossing model agree well with the measurements. © 2012 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Date :||26 November 2012|
|Identification Number :||10.1063/1.4768532|
|Additional Information :||<p>Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.</p> <p>The following article appeared in Applied Physics Letters, 101 (2) 221108 and may be found at <http://dx.doi.org/10.1063/1.4768532 >Marko IP et al., Appl. Phys.Lett. 101, 221108 (2012)</A> </p>|
|Depositing User :||Symplectic Elements|
|Date Deposited :||01 Feb 2013 11:45|
|Last Modified :||23 Sep 2013 19:58|
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