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Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications

Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Hosea, TJC, Sweeney, SJ, Hosea, TJC, Petropoulos, JP, Zhong, Y , Dongmo, PB and Zide, JMO (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications Applied Physics Letters, 101 (22).

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Abstract

Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, E, and spin-orbit splitting, Δ, respectively. The possibility of achieving Δ > E and a reduced temperature (T) dependence for E are significant for suppressing recombination losses and improving performance in mid-infrared photonic devices. We measure E (x, T) and Δ (x, T) in InGa BiAs/InP samples for 0 x 0.039 by various complementary optical spectroscopic techniques. While we find no clear evidence of a decreased dE/dT (≈0.34 ± 0.06 meV/K in all samples) we find Δ > E for x > 3.3-4.3. The predictions of a valence band anti-crossing model agree well with the measurements. © 2012 American Institute of Physics.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
NameEmailORCID
Marko, IPUNSPECIFIEDUNSPECIFIED
Batool, ZUNSPECIFIEDUNSPECIFIED
Hild, KUNSPECIFIEDUNSPECIFIED
Jin, SRUNSPECIFIEDUNSPECIFIED
Hossain, NUNSPECIFIEDUNSPECIFIED
Hosea, TJCUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Hosea, TJCUNSPECIFIEDUNSPECIFIED
Petropoulos, JPUNSPECIFIEDUNSPECIFIED
Zhong, YUNSPECIFIEDUNSPECIFIED
Dongmo, PBUNSPECIFIEDUNSPECIFIED
Zide, JMOUNSPECIFIEDUNSPECIFIED
Date : 26 November 2012
Identification Number : 10.1063/1.4768532
Additional Information : <p>Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.</p> <p>The following article appeared in Applied Physics Letters, 101 (2) 221108 and may be found at <http://dx.doi.org/10.1063/1.4768532 >Marko IP et al., Appl. Phys.Lett. 101, 221108 (2012)</A> </p>
Depositing User : Symplectic Elements
Date Deposited : 01 Feb 2013 11:45
Last Modified : 31 Oct 2017 14:56
URI: http://epubs.surrey.ac.uk/id/eprint/745673

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