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Bandgap enhancement of layered nanocrystalline silicon from excimer laser crystallization

Adikaari, AADT, Carey, JD, Stolojan, V, Keddie, JL and Silva, SRP (2006) Bandgap enhancement of layered nanocrystalline silicon from excimer laser crystallization NANOTECHNOLOGY, 17 (21). pp. 5412-5416.

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Abstract

Excimer laser irradiation is used to crystallize hydrogenated amorphous silicon thin films. The resulting films show a stratified microstructure with a crystalline volume fraction of up to 90%. There is a range of excimer laser energy that can produce stratified nanocrystalline silicon with a Tauc gap as high as 2.2 eV. This value is greater than that of amorphous or crystalline silicon and is contrary to that predicted from the theoretical analysis of mixed-phase silicon thin films. The phenomenon is explained by employing transmission electron microscopy and spectroscopic ellipsometry, and the observed bandgap enhancement is associated with quantum confinement effects within the nanocrystalline silicon layers, rather than an impurity variation.

Item Type: Article
Authors :
AuthorsEmailORCID
Adikaari, AADTUNSPECIFIEDUNSPECIFIED
Carey, JDUNSPECIFIEDUNSPECIFIED
Stolojan, VUNSPECIFIEDUNSPECIFIED
Keddie, JLUNSPECIFIEDUNSPECIFIED
Silva, SRPUNSPECIFIEDUNSPECIFIED
Date : 14 November 2006
Identification Number : https://doi.org/10.1088/0957-4484/17/21/021
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Physics, Applied, Science & Technology - Other Topics, Materials Science, Physics, THIN-FILM TRANSISTORS, AMORPHOUS-SILICON, POLYCRYSTALLINE SILICON, SI-H
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:43
Last Modified : 28 Mar 2017 13:43
URI: http://epubs.surrey.ac.uk/id/eprint/745636

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