Electron paramagnetic resonance of erbium doped silicon
Carey, JD, Donegan, JF, Barklie, RC, Priolo, F, Franzo, G and Coffa, S (1996) Electron paramagnetic resonance of erbium doped silicon Applied Physics Letters, 69 (25). pp. 3854-3856.
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Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implanted with 10^15 Er/cm2. One sample was coimplanted with oxygen to give an impurity concentration of 10^20 O/cm3 and 10^19 Er/cm3. In this coimplanted sample, sharp lines are observed which are identified as arising from a single spin 1/2 Er3+ center having a g tensor exhibiting monoclinic C1h symmetry. The principal g values and tilt angle are g1=0.80, g2=5.45, g3=12.60, and τ=2.6°. In the absence of O, the sharp lines are not observed. No Er3+ cubic centers were detected in either sample. Possible structures for the center are discussed
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Date :||16 December 1996|
|Identification Number :||10.1063/1.117127|
|Uncontrolled Keywords :||Erbium doped silicon, magetic resonance, monoclinic symmetry, ESR and EPR, rare earth ions, spin Hamiltonian, Er3+ magnetic resonance, physics, quantum technologies, quantum information processing, qbit materials, lanthanide, crystal field, shallow dopants|
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|Additional Information :||
Copyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 69 (25) and may be found at http://dx.doi.org/10.1063/1.117127
|Depositing User :||Symplectic Elements|
|Date Deposited :||28 Jan 2013 12:05|
|Last Modified :||09 Jun 2014 13:13|
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