Electron delocalization in amorphous carbon by ion implantation

Khan, RUA, Carey, JD, Silva, SRP, Jones, BJ and Barklie, RC (2001) Electron delocalization in amorphous carbon by ion implantation PHYSICAL REVIEW B, 63 (12), ARTN 1.

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Abstract

The electrical properties of amorphous carbon are governed by the high localization of the sp π states, and conventional methods of altering the sp content result in macroscopic graphitization. By using ion beams we have achieved a delocalization of the π states by introducing nanoclustering and hence improving the connectivity between existing clusters, as demonstrated by the increase in the conductivity by two orders of magnitude without modification of the band gap. At higher doses, paramagnetic relaxation-time measurements indicate that exchange effects are present. This unveils the possibility of amorphous carbon-based electronics by tailoring the ion-beam conditions, which we demonstrate in the form of a rectifying device.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :	Name Email ORCID Khan, RUA Carey, JD Silva, SRP Jones, BJ Barklie, RC
Date :	15 March 2001
Identification Number :	10.1103/PhysRevB.63.121201
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, HYDROGENATED CARBON, SUBPLANTATION MODEL, FILM GROWTH, DIAMOND, CONDUCTIVITY, SI
Related URLs :	Author
Additional Information :	Copyright 2001 The American Physical Society.
Depositing User :	Symplectic Elements
Date Deposited :	28 Jan 2013 12:08
Last Modified :	31 Oct 2017 14:56
URI:	http://epubs.surrey.ac.uk/id/eprint/745629

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