Electron delocalization in amorphous carbon by ion implantation
Khan, RUA, Carey, JD, Silva, SRP, Jones, BJ and Barklie, RC (2001) Electron delocalization in amorphous carbon by ion implantation PHYSICAL REVIEW B, 63 (12), ARTN 1.
Available under License : See the attached licence file.
The electrical properties of amorphous carbon are governed by the high localization of the sp π states, and conventional methods of altering the sp content result in macroscopic graphitization. By using ion beams we have achieved a delocalization of the π states by introducing nanoclustering and hence improving the connectivity between existing clusters, as demonstrated by the increase in the conductivity by two orders of magnitude without modification of the band gap. At higher doses, paramagnetic relaxation-time measurements indicate that exchange effects are present. This unveils the possibility of amorphous carbon-based electronics by tailoring the ion-beam conditions, which we demonstrate in the form of a rectifying device.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Date :||15 March 2001|
|Identification Number :||https://doi.org/10.1103/PhysRevB.63.121201|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, HYDROGENATED CARBON, SUBPLANTATION MODEL, FILM GROWTH, DIAMOND, CONDUCTIVITY, SI|
|Related URLs :|
|Additional Information :||Copyright 2001 The American Physical Society.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||28 Jan 2013 12:08|
|Last Modified :||17 Jan 2015 14:44|
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