Electron delocalization in amorphous carbon by ion implantation

Khan, RUA, Carey, JD, Silva, SRP, Jones, BJ and Barklie, RC (2001) Electron delocalization in amorphous carbon by ion implantation PHYSICAL REVIEW B, 63 (12), ARTN 1.

Preview	Text PRB 63.pdf Available under License : See the attached licence file. Download (158kB)
Preview	Text (licence) SRI_deposit_agreement.pdf Download (33kB)

Abstract

The electrical properties of amorphous carbon are governed by the high localization of the sp π states, and conventional methods of altering the sp content result in macroscopic graphitization. By using ion beams we have achieved a delocalization of the π states by introducing nanoclustering and hence improving the connectivity between existing clusters, as demonstrated by the increase in the conductivity by two orders of magnitude without modification of the band gap. At higher doses, paramagnetic relaxation-time measurements indicate that exchange effects are present. This unveils the possibility of amorphous carbon-based electronics by tailoring the ion-beam conditions, which we demonstrate in the form of a rectifying device.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :	Khan, RUA, Carey, JD, Silva, SRP, Jones, BJ and Barklie, RC
Date :	15 March 2001
DOI :	10.1103/PhysRevB.63.121201
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, HYDROGENATED CARBON, SUBPLANTATION MODEL, FILM GROWTH, DIAMOND, CONDUCTIVITY, SI
Related URLs :	Author
Additional Information :	Copyright 2001 The American Physical Society.
Depositing User :	Symplectic Elements
Date Deposited :	28 Jan 2013 12:08
Last Modified :	06 Jul 2019 05:11
URI:	http://epubs.surrey.ac.uk/id/eprint/745629

Actions (login required)

View Item

Downloads