Reactive ion etching of quartz and Pyrex for microelectronic applications
Zeze, DA, Forrest, RD, Carey, JD, Cox, DC, Robertson, ID, Weiss, BL and Silva, SRP (2002) Reactive ion etching of quartz and Pyrex for microelectronic applications JOURNAL OF APPLIED PHYSICS, 92 (7). pp. 3624-3629.
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The reactive ion etching of quartz and Pyrex substrates was carried out using CF /Ar and CF /O gas mixtures in a combined radio frequency (rf)/microwave (μw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF /Ar or CF /O ), the relative concentration of CF in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features. © 2002 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Date :||1 October 2002|
|Identification Number :||10.1063/1.1503167|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PLASMA|
|Related URLs :|
|Additional Information :||
Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 92 (7) and may be found at http://dx.doi.org/10.1063/1.1503167
|Depositing User :||Mr Adam Field|
|Date Deposited :||28 Jan 2013 10:53|
|Last Modified :||09 Jun 2014 13:27|
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