Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Konchits, AA, Valakh, MY, Shanina, BD, Kolesnik, SP, Yanchuk, IB, Carey, JD and Silva, SRP (2003) Effects of ion implantation on electron centers in hydrogenated amorphous carbon films JOURNAL OF APPLIED PHYSICS, 93 (10). pp. 5905-5910.

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Abstract

Effects of ion implantation on electron centers were investigated in hydrogenated amorphous carbon films. Electron spin resonance and Raman spectra measurements were carried out during the analysis. It was found that ion implantation reduces the contents of hydrogen and initiates the radiation defects in hydrogenated amorphous carbon films.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :	Konchits, AA, Valakh, MY, Shanina, BD, Kolesnik, SP, Yanchuk, IB, Carey, JD and Silva, SRP
Date :	15 May 2003
DOI :	10.1063/1.1564280
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, DIAMOND-LIKE CARBON, THIN-FILMS, PARAMAGNETIC-RESONANCE, RAMAN-SPECTROSCOPY, GAP STATES, DEFECTS, EPR
Related URLs :	Author
Additional Information :	Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 93 (10) and may be found at http://dx.doi.org/10.1063/1.1564280
Depositing User :	Mr Adam Field
Date Deposited :	28 Jan 2013 10:49
Last Modified :	06 Jul 2019 05:11
URI:	http://epubs.surrey.ac.uk/id/eprint/745627

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