Effects of ion implantation on electron centers in hydrogenated amorphous carbon films
Konchits, AA, Valakh, MY, Shanina, BD, Kolesnik, SP, Yanchuk, IB, Carey, JD and Silva, SRP (2003) Effects of ion implantation on electron centers in hydrogenated amorphous carbon films JOURNAL OF APPLIED PHYSICS, 93 (10). pp. 5905-5910.
Available under License : See the attached licence file.
Effects of ion implantation on electron centers were investigated in hydrogenated amorphous carbon films. Electron spin resonance and Raman spectra measurements were carried out during the analysis. It was found that ion implantation reduces the contents of hydrogen and initiates the radiation defects in hydrogenated amorphous carbon films.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Date :||15 May 2003|
|Identification Number :||https://doi.org/10.1063/1.1564280|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, DIAMOND-LIKE CARBON, THIN-FILMS, PARAMAGNETIC-RESONANCE, RAMAN-SPECTROSCOPY, GAP STATES, DEFECTS, EPR|
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|Additional Information :||
Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 93 (10) and may be found at http://dx.doi.org/10.1063/1.1564280
|Depositing User :||Mr Adam Field|
|Date Deposited :||28 Jan 2013 10:49|
|Last Modified :||09 Jun 2014 13:27|
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