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Damage effects in Pyrex by CF4 reactive ion etching in dual RF-microwave plasmas

Zeze, DA, Carey, JD, Stolojan, V, Weiss, BL and Silva, SRP (2006) Damage effects in Pyrex by CF4 reactive ion etching in dual RF-microwave plasmas MICRO & NANO LETTERS, 1 (2). pp. 103-107.

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The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas mixtures in a combined radio frequency (rf)/microwave (µw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF4/Ar or CF4/O2), the relative concentration of CF4 in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.

Item Type: Article
Authors :
Zeze, DA
Carey, JD
Stolojan, V
Weiss, BL
Silva, SRP
Date : 1 December 2006
Identification Number : 10.1049/mnl:20065059
Uncontrolled Keywords : Science & Technology, Technology, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Science & Technology - Other Topics, Materials Science, BOROSILICATE GLASS, SURFACE, DEPOSITION, PRODUCTS, SILICON, TEMPERATURE, DISCHARGE, QUARTZ, SIO2, glasses
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:43
Last Modified : 31 Oct 2017 14:56

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