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Photoconductivity and characterization of nitrogen incorporated hydrogenated amorphous carbon thin films

Dwivedi, N, Kumar, S, Carey, JD, Malik, HK and Govind, M (2012) Photoconductivity and characterization of nitrogen incorporated hydrogenated amorphous carbon thin films Journal of Applied Physics, 112 (11), 113706.

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Abstract

The observation and origin of photoconductivity in high base pressure (∼10−3 Torr) grown nitrogen incorporated hydrogenated amorphous carbon (a-C:H:N) thin films is reported. The magnitude of conductivity at room temperature was measured to increase by nearly two orders of magnitude and exhibits a maximum ratio of photoconductivity to dark conductivity of 1.5 as the nitrogen content increased to 15.1 at. %. X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and Fourier transform infrared spectroscopy reveal enhanced sp2 bonding at higher nitrogen contents. Residual film stress, Tauc band gap, hardness, and elastic modulus are all found to decrease with addition of nitrogen. The electrical characteristics suggest the creation of a-C:H:N/p-Si heterojunction diodes having rectifying behavior. The conductivity and electrical characteristics are discussed in term of band model, and the results show that high quality a-C:H:N films can be grown at high base pressures with properties comparable to those grown at low base pressures.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
AuthorsEmailORCID
Dwivedi, NUNSPECIFIEDUNSPECIFIED
Kumar, SUNSPECIFIEDUNSPECIFIED
Carey, JDUNSPECIFIEDUNSPECIFIED
Malik, HKUNSPECIFIEDUNSPECIFIED
Govind, MUNSPECIFIEDUNSPECIFIED
Date : 6 December 2012
Identification Number : 10.1063/1.4768286
Uncontrolled Keywords : Amorphous carbon, Photoconductivity amorphous carbon, Conductivity in disordered materials, diamond-like carbon, large area electronics, electrical conductivity, XPS, high base pressure growth
Additional Information :

Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Journal of Applied Physics, 112, 11 and may be found at http://dx.doi.org/10.1063/1.4768286

Depositing User : Symplectic Elements
Date Deposited : 28 Jan 2013 11:58
Last Modified : 09 Jun 2014 13:40
URI: http://epubs.surrey.ac.uk/id/eprint/745616

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