Structure of multi-oxygen-related defects in erbium-implanted silicon
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Carey, JD (2002) Structure of multi-oxygen-related defects in erbium-implanted silicon JOURNAL OF PHYSICS-CONDENSED MATTER, 14 (36), PII S0. pp. 8537-8547.
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Official URL: http://dx.doi.org/10.1088/0953-8984/14/36/310
| Item Type: | Article | ||||||
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| Divisions : | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute | ||||||
| Authors : |
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| Date : | 15 September 2002 | ||||||
| Identification Number : | https://doi.org/10.1088/0953-8984/14/36/310 | ||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, ELECTRON-PARAMAGNETIC-RESONANCE, CRYSTALLINE SILICON, INTERSTITIAL OXYGEN, DOPED SILICON, SI, ER, IDENTIFICATION, COMPLEXES | ||||||
| Related URLs : | |||||||
| Additional Information : | Copyright 2002 Institute of Physics. This is the author's accepted manuscript. | ||||||
| Depositing User : | Symplectic Elements | ||||||
| Date Deposited : | 14 Dec 2012 10:06 | ||||||
| Last Modified : | 14 Feb 2015 14:34 | ||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/742163 |
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