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Structure of multi-oxygen-related defects in erbium-implanted silicon

Carey, JD (2002) Structure of multi-oxygen-related defects in erbium-implanted silicon JOURNAL OF PHYSICS-CONDENSED MATTER, 14 (36), PII S0. pp. 8537-8547.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
AuthorsEmailORCID
Carey, JDUNSPECIFIEDUNSPECIFIED
Date : 15 September 2002
Identification Number : 10.1088/0953-8984/14/36/310
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, ELECTRON-PARAMAGNETIC-RESONANCE, CRYSTALLINE SILICON, INTERSTITIAL OXYGEN, DOPED SILICON, SI, ER, IDENTIFICATION, COMPLEXES
Related URLs :
Additional Information : Copyright 2002 Institute of Physics. This is the author's accepted manuscript.
Depositing User : Symplectic Elements
Date Deposited : 14 Dec 2012 10:06
Last Modified : 14 Feb 2015 14:34
URI: http://epubs.surrey.ac.uk/id/eprint/742163

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