Lattice location of rare earth ions in semiconductors: Interpretation and limitations of using g values
Carey, D (2005) Lattice location of rare earth ions in semiconductors: Interpretation and limitations of using g values Materials Research Society Symposium Proceedings, 866. pp. 195-200.
MRS Proceedings 866, 195 (2005).pdf
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The g values of rare earth ions obtained from either paramagnetic resonance or Zeeman measurements are often used to interpret the location and/ or environment surrounding rare earth ions. In the case of centres with cubic symmetry the g value can be used to distinguish between substitutional and interstitial sites. For centres with less than cubic symmetry the average g value, taken as 1/3 trace of the g tensor, is often used as an indication of the lattice location and/or a measure of the strength of the local crystal field. This approach is widely used but is based on the assumption that the non-cubic terms in the total crystal field potential are small compared with the cubic crystal field. In this paper we have explored this assumption by calculating the principal g values in axial crystal fields for the Er ion. We examine the limits over which the average g value approach is valid. Comparison is made with published results. © 2005 Materials Research Society.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Identification Number :||10.1557/PROC-866-V6.7|
|Additional Information :||Copyright 2005 Materials Research Society. The article may be found http://dx.doi.org/10.1557/PROC-866-V6.7.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||14 Dec 2012 10:24|
|Last Modified :||09 Jun 2014 13:13|
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