Lattice location of rare earth ions in semiconductors: Interpretation and limitations of using g values

Carey, D (2005) Lattice location of rare earth ions in semiconductors: Interpretation and limitations of using g values Materials Research Society Symposium Proceedings, 866. pp. 195-200.

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Abstract

The g values of rare earth ions obtained from either paramagnetic resonance or Zeeman measurements are often used to interpret the location and/ or environment surrounding rare earth ions. In the case of centres with cubic symmetry the g value can be used to distinguish between substitutional and interstitial sites. For centres with less than cubic symmetry the average g value, taken as 1/3 trace of the g tensor, is often used as an indication of the lattice location and/or a measure of the strength of the local crystal field. This approach is widely used but is based on the assumption that the non-cubic terms in the total crystal field potential are small compared with the cubic crystal field. In this paper we have explored this assumption by calculating the principal g values in axial crystal fields for the Er ion. We examine the limits over which the average g value approach is valid. Comparison is made with published results. © 2005 Materials Research Society.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :	Name Email ORCID Carey, D
Date :	2005
Identification Number :	10.1557/PROC-866-V6.7
Additional Information :	Copyright 2005 Materials Research Society. The article may be found http://dx.doi.org/10.1557/PROC-866-V6.7.
Depositing User :	Symplectic Elements
Date Deposited :	14 Dec 2012 10:24
Last Modified :	31 Oct 2017 14:54
URI:	http://epubs.surrey.ac.uk/id/eprint/742162

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