Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation Electronic Materials and Processing
Shtereva, KS, Novotny, I, Tvarozek, V, Vojs, M, Flickyngerova, S, Sutta, P, Vincze, A, Milosavljević, M, Jeynes, C and Peng, N (2012) Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation Electronic Materials and Processing ECS Journal of Solid State Science and Technology, 1 (5). pp. 237-240.
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The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1×1015 and 1×1016 cm−2 to achieve a p-type semiconductor. An implantation of 1×1015 cm−2 N+-ions yielded a p-type with hole concentrations 1017–1018 cm−3 in some as-implanted samples. The films annealed at temperatures above 200°C in O2 and above 400°C in N2 were n-type with electron concentrations 1017–1020 cm−3. The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1×1016 cm−2 dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors by nitrogen acceptors. The electron concentrations ratio n(1×1015)/n(1×1016) decreases with increasing annealing temperature. Hall measurements showed that 1×1016 cm−2 N-implanted films became p-type after low temperature annealing in O2 at 200°C and in N2 at 400°C with hole concentrations of 3.2×1017 cm−3 and 1.6×1019 cm−3, respectively. Nitrogen-implanted ZnO:Ga films showed a c-axes preferred orientation of the crystallites. Annealing is shown to increase the average transmittance (>80%) of the films and to cause bandgap widening (3.19–3.3 eV).
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||20 September 2012|
|Identification Number :||10.1149/2.003206jss|
|Depositing User :||Symplectic Elements|
|Date Deposited :||14 Dec 2012 12:04|
|Last Modified :||23 Sep 2013 19:55|
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