Di-carbon defects in annealed highly carbon doped GaAs
Wagner, J, Newman, RC, Davidson, BR, Westwater, SP, Bullough, TJ, Joyce, TB, Latham, CD, Jones, R and Öberg, S (1997) Di-carbon defects in annealed highly carbon doped GaAs Physical Review Letters, 78 (1). pp. 74-77.
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Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm-1 in GaAs codoped with 12C and 13C after annealing at 850 °C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom by an undisplaced CAs acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and 1788 cm-1 from a different C-C complex.
|Divisions :||Faculty of Engineering and Physical Sciences > Chemistry|
|Date :||6 January 1997|
|Identification Number :||https://doi.org/10.1103/PhysRevLett.78.74|
|Related URLs :|
|Additional Information :||Copyright 1997 The American Physical Society.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||14 Dec 2012 12:43|
|Last Modified :||23 Sep 2013 19:54|
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