Ultraviolet Photoluminescence from Gd-implanted AlN Epilayers
Zavada, J M, Nepal, N, Lin, J Y, Jiang, H X, Brown, E, Hommerich, U, Hite, J, Thaler, G T, Abernathy, C R, Pearton, S J and Gwilliam, R (2006) Ultraviolet Photoluminescence from Gd-implanted AlN Epilayers Applied Physics Letters, 89 (15).
Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of similar to 6x10(14) cm(-2). Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||1 January 2006|
|Identification Number :||10.1063/1.2357552|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol. 89, Iss. 15. Copyright 2006 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:05|
|Last Modified :||23 Sep 2013 18:25|
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