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Ultraviolet Photoluminescence from Gd-implanted AlN Epilayers

Zavada, J M, Nepal, N, Lin, J Y, Jiang, H X, Brown, E, Hommerich, U, Hite, J, Thaler, G T, Abernathy, C R, Pearton, S J and Gwilliam, R (2006) Ultraviolet Photoluminescence from Gd-implanted AlN Epilayers Applied Physics Letters, 89 (15).


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Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of similar to 6x10(14) cm(-2). Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
Zavada, J M
Nepal, N
Lin, J Y
Jiang, H X
Brown, E
Hommerich, U
Hite, J
Thaler, G T
Abernathy, C R
Pearton, S J
Date : 1 January 2006
DOI : 10.1063/1.2357552
Additional Information : Published in <i>Applied Physics Letters,</i> Vol. 89, Iss. 15. Copyright 2006 American Institute of Physics. Click <a href=>here</a> to access the journal's website.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:05
Last Modified : 16 Jan 2019 16:18

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