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A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Everett, JP, Kearney, MJ, Rueda, H, Johnson, EM, Aaen, PH, Wood, J and Snowden, CM (2011) A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors IEEE T ELECTRON DEV, 58 (9). 3081 - 3088. ISSN 0018-9383

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Electron_Devices_2011_Final_Author_Versionof_Everett,_Kearney_and_Snowden.pdf - Accepted Version

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Item Type: Article
Additional Information: (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Uncontrolled Keywords: Field-effect transistor (FET), laterally diffused metal-oxide-semiconductor (LDMOS), quasi-2-D (Q2-D), transistor model, INCLUDING QUASI-SATURATION, CHARGE-SHEET MODEL, MOSFET MODEL, VOLTAGE, CIRCUIT, DEVICE, CAD
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Theory and Computation
Depositing User: Symplectic Elements
Date Deposited: 28 Oct 2011 10:35
Last Modified: 23 Sep 2013 18:47
URI: http://epubs.surrey.ac.uk/id/eprint/7392

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