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New materials for radiation hard semiconductor dectectors

Sellin, PJ and Vaitkus, J (2006) New materials for radiation hard semiconductor dectectors NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 557 (2). 479 - 489. ISSN 0168-9002

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Official URL: http://dx.doi.org/10.1016/j.nima.2005.10.128


Item Type:Article
Additional Information:NOTICE: this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research A. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research A, 557(2), February 2006, DOI 10.1016/j.nima.2005.10.128.
Uncontrolled Keywords:Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Particles & Fields, Spectroscopy, Physics, radiation hard semiconductor detectors, silicon carbide, gallium nitride, amorphous silicon, HYDROGENATED AMORPHOUS-SILICON, CHEMICAL-VAPOR-DEPOSITION, ALPHA-PARTICLE DETECTION, PHASE EPITAXY, SIC WAFERS, SEMIINSULATING GAN, SCHOTTKY DIODES, STACKING-FAULTS, PIXEL DETECTORS, IRRADIATED GAN
Divisions:Faculty of Engineering and Physical Sciences > Physics
ID Code:7375
Deposited By:Symplectic Elements
Deposited On:07 Dec 2011 12:16
Last Modified:08 Jun 2013 15:51

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