New materials for radiation hard semiconductor dectectors
Sellin, PJ and Vaitkus, J (2006) New materials for radiation hard semiconductor dectectors NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 557 (2). pp. 479-489.
sellin & vaitkus.pdf - Accepted version Manuscript
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|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Date :||15 February 2006|
|Identification Number :||https://doi.org/10.1016/j.nima.2005.10.128|
|Uncontrolled Keywords :||Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Particles & Fields, Spectroscopy, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, PARTICLES & FIELDS, SPECTROSCOPY, radiation hard semiconductor detectors, silicon carbide, gallium nitride, amorphous silicon, HYDROGENATED AMORPHOUS-SILICON, CHEMICAL-VAPOR-DEPOSITION, ALPHA-PARTICLE DETECTION, PHASE EPITAXY, SIC WAFERS, SEMIINSULATING GAN, SCHOTTKY DIODES, STACKING-FAULTS, PIXEL DETECTORS, IRRADIATED GAN|
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|Additional Information :||NOTICE: this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research A. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research A, 557(2), February 2006, DOI 10.1016/j.nima.2005.10.128.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||07 Dec 2011 12:16|
|Last Modified :||17 Jan 2015 14:44|
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