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Fluoropolymer indium-tin-oxide buffer layers for improved power conversion in organic photovoltaics

Kang, B, Tan, LW and Silva, SRP (2008) Fluoropolymer indium-tin-oxide buffer layers for improved power conversion in organic photovoltaics APPLIED PHYSICS LETTERS, 93 (13). ? - ?. ISSN 0003-6951

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Abstract

We investigate the effects of polytetrafluoroethylene (PTFE) on poly (3-hexylthiophene): phenyl-C61- butyric acid methyl ester (P3HT:PCBM) based organic photovoltaic (OPV) devices by inserting thermally evaporated PTFE films between indium-tin-oxide (ITO) and P3HT: PCBM layers. Significant improvement in terms of open-circuit voltage, short-circuit current, and thereby in its commensurate power conversion efficiency is achieved compared to devices with poly (3,4-ethylenedioxythiophene): poly (styrene-sulfonate) layers. The OPVs performance enhancement is attributed to the formation of an artificial dipole layer resulting from the rich, negatively charged fluorine that facilitates the hole extraction process. This result shows the high potential of PTFE as a low cost and stable ITO buffer layer for OPV devices

Item Type: Article
Additional Information:

Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, 93 (13) 133302 and may be found at http://dx.doi.org/10.1063/1.2983742 B. LANG, L. W. TANG, S. R. P. SILVA., Appl. Phys.Lett. 93, 133302 (2008)

Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, POLYMER SOLAR-CELLS, LIGHT-EMITTING-DIODES, PHOTOELECTRON-SPECTROSCOPY, FILMS, POLYTETRAFLUOROETHYLENE
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User: Mr Adam Field
Date Deposited: 26 Nov 2012 09:57
Last Modified: 23 Sep 2013 19:50
URI: http://epubs.surrey.ac.uk/id/eprint/735961

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