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Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence

Sweeney, SJ, Lock, DA, Adams, AR, Menendez, J and VanDeWalle, CG (2005) Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence In: 27th International Conference on the Physics of Semiconductors (ICPS-27), 2004-07-26 - 2004-07-30, Flagstaff, AZ.

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Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmailORCID
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Lock, DAUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Menendez, JUNSPECIFIEDUNSPECIFIED
VanDeWalle, CGUNSPECIFIEDUNSPECIFIED
Date : 1 January 2005
Contributors :
ContributionNameEmailORCID
PublisherAMER INST PHYSICS, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics
Related URLs :
Additional Information :

Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in AIP Conference Proceedings Vol 772, and may be found at http://dx.doi.org/10.1063/1.1994705

Depositing User : Symplectic Elements
Date Deposited : 20 Dec 2012 14:01
Last Modified : 17 Jan 2015 14:59
URI: http://epubs.surrey.ac.uk/id/eprint/733540

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