Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence
Sweeney, SJ, Lock, DA, Adams, AR, Menendez, J and VanDeWalle, CG (2005) Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence In: 27th International Conference on the Physics of Semiconductors (ICPS-27), 2004-07-26 - 2004-07-30, Flagstaff, AZ.
Carrier recombination in InGaAs(P) quantum well laser structures Band gap and temperature dependence.pdf
Available under License : See the attached licence file.
|Item Type:||Conference or Workshop Item (Conference Paper)|
|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Date :||1 January 2005|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics|
|Related URLs :|
|Additional Information :||
Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in AIP Conference Proceedings Vol 772, and may be found at http://dx.doi.org/10.1063/1.1994705
|Depositing User :||Symplectic Elements|
|Date Deposited :||20 Dec 2012 14:01|
|Last Modified :||17 Jan 2015 14:59|
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