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Materials and light-emitting diode properties of dilute-nitride GaNP/GaP heterostructures

Tu, CW, Odnoblyudov, VA, Chamings, J, Ahmed, S, Sweeney, SJ and Keogh, DM (2008) Materials and light-emitting diode properties of dilute-nitride GaNP/GaP heterostructures In: 66th DRC, 2008-06-23 - 2008-06-25, Santa Barbara, USA.

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Abstract

In this paper GaNP/GaP LED structures are much simpler to grow than conventional process, chip processing uses existing technology, and GaNP/GaP LEDs exhibit only a small wavelength shift with injection current. With increasing temperature, the electroluminescence (EL) intensity decreases. Thus, GaNP/GaP LEDs are in the process of being commercialized.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
AuthorsEmailORCID
Tu, CWUNSPECIFIEDUNSPECIFIED
Odnoblyudov, VAUNSPECIFIEDUNSPECIFIED
Chamings, JUNSPECIFIEDUNSPECIFIED
Ahmed, SUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Keogh, DMUNSPECIFIEDUNSPECIFIED
Date : 2008
Identification Number : https://doi.org/10.1109/DRC.2008.4800848
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:11
Last Modified : 28 Mar 2017 14:11
URI: http://epubs.surrey.ac.uk/id/eprint/733529

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