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Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers

Hossain, N, Hild, K, Jin, S, Sweeney, SJ, Yu, S-Q, Johnson, SR, Ding, D and Zhang, Y-H (2010) Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers In: Photonics 2010, 2010-11-07 - 2010-11-11, Denver, USA.

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Abstract

Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low Jth/QW of 138A/cm2 at RT.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
AuthorsEmailORCID
Hossain, NUNSPECIFIEDUNSPECIFIED
Hild, KUNSPECIFIEDUNSPECIFIED
Jin, SUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Yu, S-QUNSPECIFIEDUNSPECIFIED
Johnson, SRUNSPECIFIEDUNSPECIFIED
Ding, DUNSPECIFIEDUNSPECIFIED
Zhang, Y-HUNSPECIFIEDUNSPECIFIED
Date : 2010
Identification Number : https://doi.org/10.1109/PHOTONICS.2010.5698756
Contributors :
ContributionNameEmailORCID
PublisherIEEE, UNSPECIFIEDUNSPECIFIED
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:11
Last Modified : 28 Mar 2017 14:11
URI: http://epubs.surrey.ac.uk/id/eprint/733526

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