MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates

Liebich, S, Zimprich, M, Ludewig, P, Beyer, A, Volz, K, Stolz, W, Kunert, B, Hossain, N, Jin, SR and Sweeney, SJ (2010) MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates In: 22nd IEEE ISLC, 2010-09-26 - 2010-09-30, Kyoto, Japan.

	Text MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates.pdf Restricted to Repository staff only Available under License : See the attached licence file. Download (176kB)
	Text (licence) SRI_deposit_agreement.pdf Restricted to Repository staff only Download (33kB)

Abstract

In this work we focus on the MOVPE growth of Ga(NAsP) laser structures for electrical current injection lattice matched on exactly orientated Si substrates and their structural characterization.

Item Type:	Conference or Workshop Item (UNSPECIFIED)
Authors :	Name Email ORCID Liebich, S Zimprich, M Ludewig, P Beyer, A Volz, K Stolz, W Kunert, B Hossain, N Jin, SR Sweeney, SJ
Date :	2010
DOI :	10.1109/ISLC.2010.5642712
Depositing User :	Symplectic Elements
Date Deposited :	28 Mar 2017 14:11
Last Modified :	31 Oct 2017 14:49
URI:	http://epubs.surrey.ac.uk/id/eprint/733525

Actions (login required)

View Item

Downloads