InGaAsN as absorber in APDs for 1.3 micron wavelength applications
Ng, JS, Tan, SL, Goh, YL, Tan, CH, David, JPR, Allam, J, Sweeney, SJ and Adams, AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications In: IPRM 2010, 2010-05-31 - 2010-06-04, Kagawa, Japan.
InGaAsN as absorber in APDs for 1.3 micron wavelength applications.pdf
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Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the acceptable limit of ~0.2mA/cm2 at 150kV/cm. We also investigated whether or not InGaAsN as absorber is compatible with Al0.8Ga0.2As (the proposed avalanche material in our separate-absorption-multiplication APD design) in terms of the relationship between α and β in InGaAsN. Our observations suggest α ~ β in InGaAsN, making it compatible with Al0.8Ga0.2As.
|Item Type:||Conference or Workshop Item (Conference Paper)|
|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Identification Number :||10.1109/ICIPRM.2010.5516060|
|Additional Information :||© 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||20 Dec 2012 10:48|
|Last Modified :||23 Sep 2013 19:48|
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