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Improved performance of GaAsSb/GaAs SQW lasers

Hossain, N, Jin, SR, Sweeney, SJ, Yu, S-Q, Johnson, SR, Ding, D and Zhang, Y-H (2010) Improved performance of GaAsSb/GaAs SQW lasers In: Novel In-Plane Semiconductor Lasers IX, 2010-01-25 - 2010-01-28, San Francisco, USA.

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Abstract

This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (Jth) of 253 Acm-2, a transparent current density of 98 Acm-2, an internal quantum efficiency of 71%, an optical loss of 18 cm-1 and a characteristic temperature (T0) = 51K. The defect related recombination in these devices is negligible and the primary non-radiative current path has a stronger dependence on the carrier density than the radiative current contributing to ~84% of the threshold current at RT. From high hydrostatic pressure dependent measurements, a slight decrease followed by the strong increase in threshold current with pressure is observed, suggesting that the device performance is limited to both Auger recombination and carrier leakage.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmailORCID
Hossain, NUNSPECIFIEDUNSPECIFIED
Jin, SRUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Yu, S-QUNSPECIFIEDUNSPECIFIED
Johnson, SRUNSPECIFIEDUNSPECIFIED
Ding, DUNSPECIFIEDUNSPECIFIED
Zhang, Y-HUNSPECIFIEDUNSPECIFIED
Date : 2010
Identification Number : 10.1117/12.842253
Additional Information : Copyright 2010 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Depositing User : Symplectic Elements
Date Deposited : 14 Dec 2012 11:45
Last Modified : 23 Sep 2013 19:48
URI: http://epubs.surrey.ac.uk/id/eprint/733522

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