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Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE

Hossain, N, Jin, SR, Sweeney, SJ, Liebich, S, Reinhard, S, Volz, K, Kunert, B and Stolz, W (2010) Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE In: Photonics 2010, 2010-11-07 - 2010-11-11, Denver, USA.

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We are reporting for the first time, lasing operation at room temperature (RT) with a low threshold current density (Jth) in novel direct band-gap Ga(NAsP)/GaP QW lasers. A carrier leakage process is found to dominate the temperature dependence of the laser threshold current.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
Hossain, N
Jin, SR
Sweeney, SJ
Liebich, S
Reinhard, S
Volz, K
Kunert, B
Stolz, W
Date : 2010
DOI : 10.1109/PHOTONICS.2010.5698759
Contributors :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:11
Last Modified : 31 Oct 2017 14:49

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