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The Potential Role of Bismide Alloys in Future Photonic Devices

Sweeney, SJ, Batool, Z, Hild, K, Jin, SR and Hosea, TJC (2011) The Potential Role of Bismide Alloys in Future Photonic Devices In: 13th ICTON, 2011-06-26 - 2011-06-30, Stockholm, Sweden.

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In a similar manner to the dilute nitrides, the incorporation of Bismuth in semiconductors such as GaAs is predicted to lead to a band-anti-crossing effect (in the valence band) causing a large band gap bowing. In addition, the large size of Bismuth atoms gives rise to a large spin-orbit splitting. This opens-up interesting new possibilities for efficient photonic devices, such as near- and mid-infrared lasers which are more thermally stable and less susceptible to losses compared to conventional InP-based devices. Since Bismuth principally influences the valence band, while nitrogen influences the conduction band, combining Bismuth and Nitrogen in III-V alloys offers huge potential for engineering the conduction and valence band offsets, the band gap and spin-orbit splitting, with wide scope for the design of photonic devices.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
Sweeney, SJ
Batool, Z
Hild, K
Jin, SR
Hosea, TJC
Date : 2011
DOI : 10.1109/ICTON.2011.5970829
Contributors :
Uncontrolled Keywords : Bismuth, semiconductor lasers, quantum wells, Auger recombination, temperature sensitivity, threshold current, optical communications, mid-infrared
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:11
Last Modified : 31 Oct 2017 14:49

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