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Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon

Hossain, N, Jin, SR, Sweeney, SJ, Liebich, S, Ludewig, P, Zimprich, M, Volz, K, Kunert, B and Stolz, W (2011) Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon In: Group IV Photonics, 2011-09-14 - 2011-09-16, London, UK.

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Abstract

This paper reports the lattice matched monolithic integration of novel direct band-gap dilute nitride Ga(NAsP) QW lasers on an (001) silicon substrate using novel (BGa)P strain compensating layer. Lasing operation up to 165K is verified with a threshold current density of 1.6kAcm-2 and a characteristic temperature of 73K for a SQW device, which is a positive step towards a commercial solution for the monolithic integration of long term stable laser diodes on silicon substrates.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Hossain, NUNSPECIFIEDUNSPECIFIED
Jin, SRUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Liebich, SUNSPECIFIEDUNSPECIFIED
Ludewig, PUNSPECIFIEDUNSPECIFIED
Zimprich, MUNSPECIFIEDUNSPECIFIED
Volz, KUNSPECIFIEDUNSPECIFIED
Kunert, BUNSPECIFIEDUNSPECIFIED
Stolz, WUNSPECIFIEDUNSPECIFIED
Date : 2011
Identification Number : 10.1109/GROUP4.2011.6053745
Contributors :
ContributionNameEmailORCID
http://www.loc.gov/loc.terms/relators/PBLIEEE, UNSPECIFIEDUNSPECIFIED
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:11
Last Modified : 31 Oct 2017 14:49
URI: http://epubs.surrey.ac.uk/id/eprint/733516

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