Novel electronic and optoelectronic properties of GaInNAs and related alloys
O'Reilly, EP, Fahy, S, Lindsay, A, Tomić, S, Fehse, R, Adams, AR, Sweeney, SJ, Andreev, AD, Klar, PJ, Grüning, H and Riechert, H (2003) Novel electronic and optoelectronic properties of GaInNAs and related alloys OSA Trends in Optics and Photonics Series, 88. pp. 523-525.
Novel electronic and optoelectronic properties of GaInNAs and related alloys CLEO.pdf
Available under License : See the attached licence file.
We overview how the novel electronic structure of dilute nitride alloys modifies the gain characteristics of GaInNAs lasers. Optimised devices should have comparable or better characteristics than InP-based emitters, enabling GaAs-based 1.3 μm vertical emitting lasers. ©2000 Optical Society of America.
|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Additional Information :||This paper was published in OSA Trends in Optics and Photonics Series and is made available as an electronic reprint with the permission of OSA. The paper can be found on the OSA website: http://www.osa.org/en-us/home/. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||19 Mar 2013 12:34|
|Last Modified :||23 Sep 2013 19:48|
Actions (login required)
Downloads per month over past year