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Unusual increase of the Auger recombination current in 1.3 mu m GaInNAs quantum-well lasers under high pressure

Jin, SR, Sweeney, SJ, Tomic, S, Adams, AR and Riechert, H (2003) Unusual increase of the Auger recombination current in 1.3 mu m GaInNAs quantum-well lasers under high pressure APPLIED PHYSICS LETTERS, 82 (14). pp. 2335-2337.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmailORCID
Jin, SRUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Tomic, SUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Riechert, HUNSPECIFIEDUNSPECIFIED
Date : 7 April 2003
Identification Number : 10.1063/1.1566468
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, SURFACE-EMITTING LASER, SEMICONDUCTOR-LASERS, THRESHOLD CURRENT, 1.3-MU-M, DIODES, GAAS
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Additional Information :

Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, 82 (14) 2335 and may be found at http://apl.aip.org/resource/1/applab/v82/i14/p2335_s1 S. R. Jin et al., Appl. Phys. Lett. 82, 2335 (2003)

Depositing User : Symplectic Elements
Date Deposited : 08 Jan 2013 14:36
Last Modified : 17 Jan 2015 14:54
URI: http://epubs.surrey.ac.uk/id/eprint/733513

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