University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Modulation speed resonant-cavity and leakage current in 650 nm light emitting diodes

Hild, K, Sale, TE, Sweeney, SJ, Hirotani, M, Mizuno, Y and Kato, T (2004) Modulation speed resonant-cavity and leakage current in 650 nm light emitting diodes IEE PROCEEDINGS-OPTOELECTRONICS, 151 (2). pp. 94-97.

[img] Text
Modulation speed and leakage current in 650 nm resonant-cavity light emitting diodes.pdf
Restricted to Repository staff only
Available under License : See the attached licence file.

Download (1MB)
[img] Text (licence)
Restricted to Repository staff only

Download (33kB)


The authors have investigated red-emitting (650 nm) resonant-cavity light emitting diodes for use with polymer optical fibres. The small signal modulation response is characterised by a single order roll-off. The -3 dB bandwidth is found to be determined solely by the differential carrier lifetime, T, in the active region and hence dependent on current density, J, alone with no intrinsic size effects. The tau(J) relation allows the calculation of the active region carrier density and hence the recombination parameters (mono- and bimolecular) in the regime where the leakage is small. It is shown that the leakage is insignificant for currents below 200 A/cm(2) at 20degreesC. Above 40degreesC the leakage rises rapidly with temperature, and is evident from a dramatic fall in tau and an accelerated rise in the current required to maintain constant light output.

Item Type: Article
Authors :
Hild, K
Sale, TE
Sweeney, SJ
Hirotani, M
Mizuno, Y
Kato, T
Date : April 2004
DOI : 10.1049/ip-opt:20040289
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:11
Last Modified : 31 Oct 2017 14:49

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800