Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures
Jin, SR, Sweeney, SJ, Ahmad, CN, Adams, AR and Murdin, BN (2004) Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures APPLIED PHYSICS LETTERS, 85 (3). pp. 357-359.
Radiative and Auger recombination in 1.3 μm InGaAsP and 1.5 μm InGaAs quantum-well lasers measured under high pressure at low and room temperatures.pdf
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|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||19 July 2004|
|Identification Number :||https://doi.org/10.1063/1.1772871|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, SEMICONDUCTOR-LASERS, THRESHOLD CURRENT, DEPENDENCE, INP, PERFORMANCE|
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|Additional Information :||
Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 85 (3) 357 and may be found at http://apl.aip.org/resource/1/applab/v85/i3/p357_s1 S.R. Jin et al., Appl. Phys. Lett. 85, 357 (2004)
|Depositing User :||Symplectic Elements|
|Date Deposited :||08 Jan 2013 14:27|
|Last Modified :||17 Jan 2015 14:56|
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