Investigation of carrier recombination processes and transport properties in GaInAsN/GaAs quantum wells
Fehse, R, O'Reilly, EP, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2005) Investigation of carrier recombination processes and transport properties in GaInAsN/GaAs quantum wells AIP Conference Proceedings, 772. pp. 985-986.
Investigation of Carrier Recombination Processes and Transport Properties in GaInAsN-GaAs Quantum Wells.pdf
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It is shown that the dramatic changes in threshold current density with changing active region growth temperature in 1.3μm GaInNAs-based lasers can be attributed almost entirely to changes in the defect related monomolecular recombination current in the optically active material. In addition, growth temperature dependent changes in the QW morphology are shown to have a significant influence on the transport properties of the structure. © 2005 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Date :||30 June 2005|
|Identification Number :||https://doi.org/10.1063/1.1994440|
|Additional Information :||
Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in AIP Conference Proceedings, 772 and may be found at http://proceedings.aip.org/resource/2/apcpcs/772/1/985_1 R. Fehse et al., AIP Conf. Proc. 772
|Depositing User :||Symplectic Elements|
|Date Deposited :||11 Dec 2012 13:50|
|Last Modified :||23 Sep 2013 19:48|
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