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Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m

O'Brien, K, Sweeney, SJ, Adams, AR, Murdin, BN, Salhi, A, Rouillard, Y and Joullie, A (2006) Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m APPLIED PHYSICS LETTERS, 89 (5). ? - ?. ISSN 0003-6951

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Item Type: Article
Additional Information:

Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, 89 (5) 051104 and may be found at K. O'Brien et al., Appl. Phys. Lett. 89, 051104 (2006)

Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, CONTINUOUS-WAVE OPERATION, QUANTUM-WELL LASERS, TEMPERATURE-DEPENDENCE, THRESHOLD CURRENT, ROOM-TEMPERATURE, SEMICONDUCTOR-LASERS
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Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Depositing User: Symplectic Elements
Date Deposited: 04 Dec 2012 11:46
Last Modified: 21 Jun 2014 13:34
URI: http://epubs.surrey.ac.uk/id/eprint/733501

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